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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
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The RF MOSFET Line
RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 33 Watts Avg. Power Gain -- 12.5 dB Efficiency -- 25% IM3 -- - 37 dBc ACPR -- - 39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 33 W AVG., 2 x W - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1 NI - 880 MRF5S21150R3
CASE 465C - 02, STYLE 1 NI - 880S MRF5S21150SR3 Symbol VDSS VGS PD Tstg TJ CW Value 65 - 0.5, +15 367 2.1 - 65 to +150 200 125 Unit Vdc Vdc Watts W/C C C Watts
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 125 W CW Case Temperature 80C, 33 W CW Symbol RJC Value (1)(2) 0.47 0.53 Unit C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3 1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
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ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1300 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 3.2 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- -- 3.7 0.26 9 3.5 -- 0.3 -- Vdc Vdc Vdc S
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 11 12.5 -- dB
23
25
--
%
IM3
- 37
- 35
dBc
ACPR
--
- 39
- 37
dBc
IRL
--
- 12
-9
dB
MRF5S21150R3 MRF5S21150SR3 2
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MOTOROLA RF DEVICE DATA
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R1 Vbias + C1 R2 C5 C6 Z6 RF INPUT Z1 C2 Z2 Z3 C4 Z4 C3 Z5 Z8 Z11 Z7 DUT C8 C14 C7 + C15 + C16 C13 Z9 Z10 Z12 C9 C19 Z13 Z14 C17 C18 Z15 Z16 Z17 RF OUTPUT C10 + C11 + C12 + C20 Vsupply
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Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9
0.500 x 0.083 Microstrip 0.505 x 0.083 Microstrip 0.536 x 0.083 Microstrip 0.776 x 0.083 Microstrip 0.119 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.024 Microstrip 0.117 x 1.100 Microstrip
Z10, Z11 Z12 Z13 Z14 Z15, Z16 Z17 PCB
0.709 x 0.083 Microstrip 0.415 x 1.100 Microstrip 0.874 x 0.083 Microstrip 1.182 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.030, r = 2.55
Figure 1. MRF5S21150 Test Circuit Schematic
Table 1. MRF5S21150 Test Circuit Component Designations and Values
Part C1 C2, C6, C8, C9, C13, C18, C19 C3,C4 C5, C7, C10, C14 C11, C12, C15, C16 C17 C20 R1, R2 Description 22 F, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 F, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Value, P/N or DWG TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA 293D1106X9035D 100B0R3BW 13661471 Manufacturer AVX ATC ATC Vishay - Vitramon Vishay - Sprague ATC Philips
MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3 3
Freescale Semiconductor, Inc.
C20 C5 R1 C9 C10 C11 C12
C1
R2
C6 C19 CUT OUT AREA
C2
C4
C3 C8
C17
C18
Freescale Semiconductor, Inc...
C7
C13
C14
C15 C16
MRF5S21150 Rev 0
Figure 2. MRF5S21150 Test Circuit Component Layout
MRF5S21150R3 MRF5S21150SR3 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
13 12 G ps , POWER GAIN (dB) 11 10 9 8 7 6 IM3 ACPR IRL Gps VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 35 30 25 20 -28 -32 -36 -40 2100 2120 2140 2160 2180 2200 -44 2220 , DRAIN EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
-10 -15 -20 -25 -30
5 2060
2080
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2 - Carrier W - CDMA Broadband Performance
14 IDQ = 1900 mA G ps , POWER GAIN (dB) 13 1600 mA 1300 mA 12 1000 mA IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-25 -30 1900 mA -35 IDQ = 700 mA -40 -45 -50 -55 -60 -65 1 1000 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 10 100 1000 1600 mA 1300 mA
11
700 mA
10 1
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 10 100 1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-25 -30 -35 -40 5th Order -45 7th Order -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 10 100 3rd Order Pout , OUTPUT POWER (dBm)
58 57 56 55 54 53 52 51 50 49 48 35 36 37 38 39 40 41 42 P1dB = 52.95 dBm (197 W) P3dB = 53.58 dBm (228 W)
IRL, INPUT RETURN LOSS (dB)
Ideal
Actual
VDD = 28 Vdc, IDQ = 1300 mA Pulsed CW, 5 sec(on), 1 msec(off) Center Frequency = 2140 MHz 43 44 45 46 47
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. (W-CDMA) Gps VDD = 28 Vdc, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
-25 -30 IM3 (dBc), ACPR (dBc) IM3 ACPR -35 -40 -45 -50 -55 100
-20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 -25 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
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f, FREQUENCY (MHz)
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
Figure 9. 2-Carrier W-CDMA Spectrum
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) MTBF FACTOR (HOURS x AMPS2 )
109
108
107
106 100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application.
Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal
Figure 11. MTBF Factor versus Junction Temperature
MRF5S21150R3 MRF5S21150SR3 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
f = 2200 MHz Zload* f = 2080 MHz Zo = 25
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f = 2080 MHz Zsource
f = 2200 MHz
VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource 3.05 - j9.66 3.97 - j10.31 4.70 - j11.03 5.45 - j12.41 6.18 - j13.04 Zload 1.02 - j2.94 1.09 - j2.51 1.16 - j2.46 1.16 - j2.58 1.02 - j2.55
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21150R3 MRF5S21150SR3 7
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NOTES
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MRF5S21150R3 MRF5S21150SR3 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
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MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3 9
Freescale Semiconductor, Inc.
NOTES
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MRF5S21150R3 MRF5S21150SR3 10
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B G
1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
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Freescale Semiconductor, Inc...
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CASE 465B - 03 ISSUE B NI - 880 MRF5S21150R3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
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CASE 465C - 02 ISSUE A NI - 880S MRF5S21150SR3
MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3 11
Freescale Semiconductor, Inc.
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF5S21150R3 MRF5S21150SR3 12
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MOTOROLA RF DEVICE DATA
MRF5S21150/D

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